An international research team led by the University of Göttingen has experimentally demonstrated that electrons in naturally occurring double-layer graphene move like particles without any mass, similar to the way light travels. This discovery has the potential to develop tiny, energy-efficient transistors that can be switched on and off, similar to a light switch in your house, but on a nanoscale. The Massachusetts Institute of Technology (MIT) in the USA and the National Institute for Materials Science (NIMS) in Japan were also involved in the research, and the results were published in Nature Communications.
Graphene, identified in 2004, is a single layer of carbon atoms known for its exceptionally high electrical conductivity. The high and constant velocity of electrons traveling through graphene has made scientists envision using it for faster and more energy-efficient transistors. However, the challenge has been controlling the material to have both a highly conductive state and a highly insulating state for a transistor. In graphene, achieving an insulating state has been difficult, limiting its potential as a transistor material.
The University of Göttingen research team has discovered that double-layer graphene, with two layers of graphene, combines the advantages of both a structure that supports fast electron motion with no mass, similar to light, and an insulating state. By applying an electric field perpendicularly to the material, the researchers were able to change the condition of the double-layer graphene, making it insulating. While these experiments were conducted at cryogenic temperatures, they demonstrate the potential of bilayer graphene to create highly efficient transistors.
Professor Thomas Weitz from Göttingen University’s Faculty of Physics explains that they were aware of the theory but had now conducted experiments that confirmed the light-like dispersion of electrons in bilayer graphene. Dr. Anna Seiler, a postdoctoral researcher and the first author of the study, calls their work a crucial first step. The next challenge for researchers will be to explore whether bilayer graphene can indeed improve transistors or if this effect can be utilized in other technology areas.
The experimental results showing the behavior of electrons in double-layer graphene offer exciting opportunities for future applications in electronic devices. The successful demonstration of the ability to switch the current on and off in double-layer graphene could lead to the development of innovative and energy-efficient transistor technology. The collaboration between the University of Göttingen, MIT, and NIMS has been instrumental in advancing the understanding and potential applications of double-layer graphene in electronic devices.
Overall, the research conducted by the international team has paved the way for exploring the potential of bilayer graphene in creating highly efficient transistors with enhanced capabilities. The combination of fast-moving electrons and an insulating state in double-layer graphene opens up new possibilities for developing advanced electronic devices. With further research and experimentation, scientists can harness the unique properties of double-layer graphene to revolutionize the field of electronics and create novel technologies with superior performance and energy efficiency.
